发明授权
- 专利标题： Methods and structures for electrostatic discharge protection
- 专利标题（中）： 静电放电保护的方法和结构
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申请号： US13555075申请日： 2012-07-20
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公开(公告)号： US08748936B2公开(公告)日： 2014-06-10
- 发明人: Shih-Yu Wang , Chia-Ling Lu , Yan-Yu Chen , Yu-Lien Liu , Tao-Cheng Lu
- 申请人： Shih-Yu Wang , Chia-Ling Lu , Yan-Yu Chen , Yu-Lien Liu , Tao-Cheng Lu
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
A semiconductor device includes a first well region of a first conductivity type, a second well region of a second conductive type within the first well region. A first region of the first conductivity type and a second region of the second conductivity type are disposed within the second well region. A third region of the first conductivity type and a fourth region of the second conductivity type are disposed within the first well region, wherein the third region and the fourth region are separated by the second well region. The semiconductor device also includes a switch device coupled to the third region.
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