摘要:
An electrostatic discharge (ESD) protection device including a modified lateral silicon-controlled rectifier (MLSCR) and a voltage control circuit is provided. The MLSCR has a first terminal, a second terminal and a control terminal connected to a first P+-type doped region, where the first terminal and the second terminal are electrically connected to a first line and a second line, respectively. The voltage control circuit is electrically connected to the first line, the second line and the control terminal. When an electrostatic pulse is appeared on the first line, the voltage control circuit provides a current path from the first line to the control terminal. When an input signal is supplied to the first line, the voltage control circuit receives a power voltage, and stops providing the current path according to the power voltage.
摘要:
An electrostatic discharge (ESD) protection device electronically connected to a pad is provided. The ESD protection device includes K PNP transistors and a protection circuit, wherein K is a positive integer. An emitter of the 1st PNP transistor is electronically connected to the pad, a base of the ith PNP transistor is electronically connected to an emitter of the (i+1)th PNP transistor, and collectors of the K PNP transistors are electronically connected to a ground, wherein i is an integer and 1≦i≦(K−1). The protection circuit is electronically connected between a base of the Kth PNP transistor and the ground and provides a discharge path. An electrostatic signal from the pad is conducted to the ground through the discharge path and the K PNP transistors.
摘要:
An electrostatic discharge protection device for protecting an inner circuit, which is operated in a source voltage, is provided and includes a protection unit and a control unit. The protection unit provides a discharge path for transmitting an electrostatic signal from a pad to a ground line. According to a voltage level at a control end, the protection unit adjusts a holding voltage and a triggering voltage determining whether to conduct the discharge path. When the source voltage is supplied, the control unit transmits the input voltage to the control end of the protection unit, so as to raise the holding and the triggering voltages of the discharge path. When the source voltage is not supplied, the control unit switches the control end of the protection unit to a floating condition by the electrostatic signal, so as to lower the holding and the triggering voltages of the discharge path.
摘要:
An embedded touch display panel including a first substrate and a second substrate is provided. The first substrate having a displaying region and a sensing region includes a stack structure, a first conductive layer and a first alignment layer. The stack structure disposed on the first substrate within the sensing region includes a protruding structure and a first rough structure disposed on the protruding structure. The first conductive layer conformally disposed on the stack structure has a first rough surface. The first rough surface is exposed from the first alignment layer that covers the first conductive layer. The second substrate includes a second conductive layer and a second alignment layer. The second conductive layer whose position corresponds to the sensing region is disposed on the second structure. A portion of the second conductive layer corresponding to the first rough surface is exposed from the second alignment layer covering thereon.
摘要:
Disclosed herein is an electronic paper display. The electronic paper display includes an electronic paper panel, a light guide structure, and a light source. The light guide structure is disposed over the electronic paper panel for reflecting and scattering light. The light source that is disposed on one lateral side of the light guide structure is operable to generate light, wherein the light generated by the light source, after being reflected and scattered by the light guide, illuminates the electronic paper panel.
摘要:
An liquid crystal display panel includes a first substrate, a second substrate, a liquid crystal layer disposed between the first and second substrates, a patterned black matrix layer disposed on the surface of the first substrate, a patterned first color filter layer disposed on the first substrate having a protruding portion that covers a portion of the patterned black matrix layer, a plurality of first ball spacers disposed on the surface of the patterned black matrix layer, and a plurality second ball spacers disposed on the surface of the protruding portion of the patterned first color filter layer. The bottom surfaces of the second ball spacers and the bottom surfaces of the first ball spacers respectively are disposed on different planes in the liquid crystal display panel.
摘要:
A method of fabricating an LCD panel includes the following steps. A patterned black matrix layer is formed on a first surface of the first substrate, wherein the patterned black matrix layer includes a plurality of black-matrix patterns disposed at boundaries of adjacent first and second sub-pixel regions. Then, a first color filter layer is formed and patterned such that the patterned first color filter layer is disposed in the first sub-pixel regions and covers surfaces of the black-matrix patterns at a side of first sub-pixel regions concurrently. After that, a second color filter layer is formed and patterned so that the patterned second color filter layer is disposed in the second sub-pixel regions. A plurality of spacers are disposed on the first surface, disposed on the surfaces of the black-matrix patterns and the surface of the first color filter layer covering the black-matrix patterns.
摘要:
A touch panel including a first substrate, a second substrate, a sealant, a liquid crystal layer, a main spacer, a first sensing spacer, a second sensing spacer, a first opposite electrode and a second opposite electrode is provided. The first substrate has a central area and a peripheral area. The second substrate is disposed opposite to the first substrate. The first sensing spacer is disposed on the central area and between the first and the second substrates. The second sensing spacer is disposed on the peripheral area and between the first and the second substrates. There's a first sensing gap between the first sensing spacer and the first opposite electrode disposed corresponding to the first sensing spacer. There's a second sensing gap between the second sensing spacer and the second opposite electrode disposed corresponding to the second sensing spacer. The first sensing gap is larger than the second sensing gap.
摘要:
An ESD protection circuit including a substrate of a first conductivity type, an annular well region of a second conductivity type, two first regions of the first conductivity type and at least one transistor of the second conductivity type is provided. The annular well region is disposed in the substrate. The first regions are disposed in the substrate and surrounded by the annular well region. The at least one transistor is disposed on the substrate between the first regions and including a source, a gate, and a drain. The annular well region and the drain are coupled to a first voltage source. The source and one of the first regions are coupled to a second voltage source, and the other of the first regions is coupled to a substrate triggering circuit.
摘要:
An electrostatic discharge (ESD) protection device electronically connected to a pad is provided. The ESD protection device includes K PNP transistors and a protection circuit, wherein K is a positive integer. An emitter of the 1st PNP transistor is electronically connected to the pad, a base of the ith PNP transistor is electronically connected to an emitter of the (i+1)th PNP transistor, and collectors of the K PNP transistors are electronically connected to a ground, wherein i is an integer and 1≦i≦(K−1). The protection circuit is electronically connected between a base of the Kth PNP transistor and the ground and provides a discharge path. An electrostatic signal from the pad is conducted to the ground through the discharge path and the K PNP transistors.