Invention Grant
- Patent Title: Semiconductor memory modules and methods of fabricating the same
- Patent Title (中): 半导体存储器模块及其制造方法
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Application No.: US13831272Application Date: 2013-03-14
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Publication No.: US08749044B2Publication Date: 2014-06-10
- Inventor: Young-Ja Kim , Junyoung Ko , Daesang Chan
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2012-0037734 20120412
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
The inventive concept provides semiconductor memory modules and methods of fabricating the same. The semiconductor memory module may include a module board having a first surface and a second surface opposite to the first surface, and memory chips mounted directly on the module board by a flip-chip bonding method. Each of the memory chips may include a passivation layer disposed on a rear surface of each of the memory chips, and the passivation layer may have a color different from a natural color of single-crystalline silicon.
Public/Granted literature
- US20130270696A1 SEMICONDUCTOR MEMORY MODULES AND METHODS OF FABRICATING THE SAME Public/Granted day:2013-10-17
Information query
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