公开(公告)号：US08866295B2

公开(公告)日：2014-10-21

申请号：US14278751

申请日：2014-05-15

申请人： Samsung Electronics Co., Ltd.

发明人： Young-Ja Kim ,  Junyoung Ko ,  Daesang Chan

IPC分类号： H01L23/498 ,  H01L21/50 ,  H01L23/00

CPC分类号： H01L21/50 ,  H01L23/3157 ,  H01L23/49811 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/838 ,  H01L2224/94 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/11

摘要： The inventive concept provides semiconductor memory modules and methods of fabricating the same. The semiconductor memory module may include a module board having a first surface and a second surface opposite to the first surface, and memory chips mounted directly on the module board by a flip-chip bonding method. Each of the memory chips may include a passivation layer disposed on a rear surface of each of the memory chips, and the passivation layer may have a color different from a natural color of single-crystalline silicon.

公开(公告)号：US12051680B2

公开(公告)日：2024-07-30

申请号：US17735158

申请日：2022-05-03

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Tae Hwan Kim ,  Hyung Gil Baek ,  Young-Ja Kim ,  Kang Gyune Lee ,  Sang-Won Lee ,  Yong Kwan Lee

IPC分类号： H01L25/16 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L25/162 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L25/165 ,  H01L23/49816 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/165 ,  H01L2924/1659 ,  H01L2924/182

摘要： A semiconductor package may include; a first substrate, a first semiconductor chip disposed on the first substrate, an interposer disposed on the first semiconductor chip, a connecter spaced apart from the first semiconductor chip in a first horizontal direction and extending between the first substrate and the interposer, wherein the connecter directly electrically connects the first substrate and the interposer, a capacitor disposed between the connecter and the first semiconductor chip, and a guide pattern including a first guide portion and an opposing second guide portion spaced apart in the first horizontal direction, wherein the first guide portion is disposed between the connecter and the capacitor, the second guide portion is disposed between the capacitor and the first semiconductor chip, and at least part of the capacitor is inserted between the first guide portion and the second guide portion.

公开(公告)号：US09818699B2

公开(公告)日：2017-11-14

申请号：US15065850

申请日：2016-03-09

申请人： Samsung Electronics Co., Ltd.

发明人： Young-Ja Kim ,  Bongchan Kim

IPC分类号： H05K9/00 ,  H05K13/00 ,  H01L23/552 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/552 ,  H01L21/561 ,  H01L21/78 ,  H01L23/3128 ,  H01L24/97 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2224/85

摘要： Provided is a method of fabricating a semiconductor package. The method includes providing a substrate including a plurality of semiconductor chips; forming a mold layer covering the semiconductor chips; forming a first shielding layer on the mold layer; cutting the mold layer and the first shielding layer to form trenches between the semiconductor chips; and forming a second shielding layer to fill the trenches.

公开(公告)号：US08956923B2

公开(公告)日：2015-02-17

申请号：US13835749

申请日：2013-03-15

申请人： Samsung Electronics Co, Ltd.

发明人： Young-Ja Kim ,  Jun-Young Ko ,  Dae-Young Jeong ,  Dae-Sang Chan

IPC分类号： H01L21/00 ,  B05C13/02 ,  B29C65/00 ,  B05D5/12 ,  H01L21/56

CPC分类号： H01L21/56 ,  H01L21/563 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating a semiconductor device comprises loading a circuit board including a semiconductor chip into underfill equipment, positioning the circuit board on a depositing chuck of the underfill equipment, filling an underfill material in a space between the semiconductor chip and the circuit board placed on the depositing chuck; transferring the circuit board including the underfill material so that it is positioned on a post-treatment chuck of the underfill equipment; heating the underfill material of the circuit board placed on the post-treatment chuck in a vacuum state, and unloading the circuit board, of which the underfill material has been heated in the vacuum state, from the underfill equipment.

摘要翻译： 一种制造半导体器件的方法包括将包括半导体芯片的电路板加载到底部填充设备中，将电路板定位在底部填充设备的沉积卡盘上，在半导体芯片和放置在半导体芯片之间的电路板之间的空间中填充底部填充材料 沉积卡盘; 传送包括底部填充材料的电路板，使其位于底部填充设备的后处理卡盘上; 在真空状态下加热放置在后处理卡盘上的电路板的底部填充材料，并将底部填充材料在真空状态下被加热的电路板从底部填充设备卸载。

公开(公告)号：US08749044B2

公开(公告)日：2014-06-10

申请号：US13831272

申请日：2013-03-14

申请人： Samsung Electronics Co., Ltd.

发明人： Young-Ja Kim ,  Junyoung Ko ,  Daesang Chan

IPC分类号： H01L23/48

CPC分类号： H01L21/50 ,  H01L23/3157 ,  H01L23/49811 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/838 ,  H01L2224/94 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/11

摘要： The inventive concept provides semiconductor memory modules and methods of fabricating the same. The semiconductor memory module may include a module board having a first surface and a second surface opposite to the first surface, and memory chips mounted directly on the module board by a flip-chip bonding method. Each of the memory chips may include a passivation layer disposed on a rear surface of each of the memory chips, and the passivation layer may have a color different from a natural color of single-crystalline silicon.

摘要翻译： 本发明构思提供了半导体存储器模块及其制造方法。 半导体存储器模块可以包括具有与第一表面相对的第一表面和第二表面的模块板，以及通过倒装芯片焊接方法直接安装在模块板上的存储芯片。 每个存储器芯片可以包括设置在每个存储器芯片的后表面上的钝化层，并且钝化层可以具有与单晶硅的自然颜色不同的颜色。