Invention Grant
- Patent Title: Semiconductor device and method for forming the same
- Patent Title (中): 半导体装置及其形成方法
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Application No.: US13132985Application Date: 2011-02-23
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Publication No.: US08749067B2Publication Date: 2014-06-10
- Inventor: Chao Zhao , Wenwu Wang , Huilong Zhu
- Applicant: Chao Zhao , Wenwu Wang , Huilong Zhu
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Troutman Sanders LLP
- Priority: CN201010257006 20100818
- International Application: PCT/CN2011/000279 WO 20110223
- International Announcement: WO2012/022108 WO 20120223
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/4763
Abstract:
The present invention provides a semiconductor device. The semiconductor device comprises contact plugs that comprise a first contact plug formed by a first barrier layer arranged on the source and drain regions and a tungsten layer arranged on the first barrier layer; and second contact plugs comprising a second barrier layer arranged on both of the metal gate and the first contact plug and a conductive layer arranged on the second barrier layer. The conductivity of the conductive layer is higher than that of the tungsten layer. A method for forming the semiconductor device is also provided. The present invention provides the advantage of enhancing the reliability of the device when using the copper contact technique.
Public/Granted literature
- US20120043592A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2012-02-23
Information query
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