发明授权
US08750015B2 Integrated circuit comprising a FRAM memory and method for granting read-access to a FRAM memory
有权
包括FRAM存储器的集成电路和用于授予对FRAM存储器的读取访问的方法
- 专利标题: Integrated circuit comprising a FRAM memory and method for granting read-access to a FRAM memory
- 专利标题(中): 包括FRAM存储器的集成电路和用于授予对FRAM存储器的读取访问的方法
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申请号: US13025878申请日: 2011-02-11
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公开(公告)号: US08750015B2公开(公告)日: 2014-06-10
- 发明人: Volker Rzehak , Rudiger Kuhn , Johannes Gerber , Matthias Arnold
- 申请人: Volker Rzehak , Rudiger Kuhn , Johannes Gerber , Matthias Arnold
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Robert D. Marshall, Jr.; W. James Brady; Frederick J. Telecky, Jr.
- 优先权: DE102010007629 20100211
- 主分类号: G11C11/22
- IPC分类号: G11C11/22
摘要:
An electronic device includes an integrated circuit with a FRAM memory and an integrated capacitor connected between a power supply for the FRAM memory and ground. The integrated capacitor has a capacitance sufficient to store the charge necessary for a complete read-and-write-back cycle of the FRAM memory. When granting read-access to the FRAM memory, the FRAM memory is supplied by the integrated capacitor which is then disconnected from the integrated circuit power supply. Upon receiving a request for a read-access to the FRAM memory, a charge detector detects whether the internal capacitor is sufficiently charged for a complete read-and-write-back cycle of the FRAM memory. Read-access to the FRAM memory is only granted if the internal capacitor is sufficiently charged and disconnected from the power supply. An alternative embodiment alternately charges and powers the FRAM from two integrated capacitors.