Invention Grant
US08753802B2 Pattern forming method, chemical amplification resist composition and resist film
有权
图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
- Patent Title: Pattern forming method, chemical amplification resist composition and resist film
- Patent Title (中): 图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
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Application No.: US13656960Application Date: 2012-10-22
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Publication No.: US08753802B2Publication Date: 2014-06-17
- Inventor: Keita Kato , Shinji Tarutani , Sou Kamimura , Yuichiro Enomoto , Kaoru Iwato
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-099298 20100422
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A pattern forming method comprising: (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains: (A) a resin, (B) a nonionic compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent.
Public/Granted literature
- US20130045365A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM Public/Granted day:2013-02-21
Information query
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