Invention Grant
US08753922B2 Method of manufacturing a semiconductor device 有权
制造半导体器件的方法

Method of manufacturing a semiconductor device
Abstract:
A first semiconductor chip and a second semiconductor chip are overlapped with each other in a direction in which a first multilayer interconnect layer and a second multilayer interconnect layer are opposed to each other. When seen in a plan view, a first inductor and a second inductor are overlapped. The first semiconductor chip and the second semiconductor chip have non-opposed areas which are not opposed to each other. The first multilayer interconnect layer has a first external connection terminal in the non-opposed area, and the second multilayer interconnect layer has a second external connection terminal in the non-opposed area.
Public/Granted literature
Information query
Patent Agency Ranking
0/0