Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13741910Application Date: 2013-01-15
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Publication No.: US08753922B2Publication Date: 2014-06-17
- Inventor: Yasutaka Nakashiba , Kenta Ogawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-203040 20090902
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/495 ; H01L23/48 ; H01L23/522 ; H01L23/64 ; H01L23/544

Abstract:
A first semiconductor chip and a second semiconductor chip are overlapped with each other in a direction in which a first multilayer interconnect layer and a second multilayer interconnect layer are opposed to each other. When seen in a plan view, a first inductor and a second inductor are overlapped. The first semiconductor chip and the second semiconductor chip have non-opposed areas which are not opposed to each other. The first multilayer interconnect layer has a first external connection terminal in the non-opposed area, and the second multilayer interconnect layer has a second external connection terminal in the non-opposed area.
Public/Granted literature
- US20130130442A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2013-05-23
Information query
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