发明授权
- 专利标题： FinFET structure having fully silicided fin
- 专利标题（中）： FinFET结构具有完全硅化的翅片
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申请号： US13015123申请日： 2011-01-27
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公开(公告)号： US08753964B2公开(公告)日： 2014-06-17
- 发明人: Andres Bryant , Huiming Bu , Dechao Guo , Wilfried E. Haensch , Chun-Chen Yeh
- 申请人： Andres Bryant , Huiming Bu , Dechao Guo , Wilfried E. Haensch , Chun-Chen Yeh
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Law Offices of Ira D. Blecker, P.C.
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
A semiconductor device which includes fins of a semiconductor material formed on a semiconductor substrate and then a gate electrode formed over and in contact with the fins. An insulator layer is deposited over the gate electrode and the fins. A trench opening is then etched in the insulator layer. The trench opening exposes the fins and extends between the fins. The fins are then silicided through the trench opening. Then, the trench opening is filled with a metal in contact with the silicided fins to form a local interconnect connecting the fins.
公开/授权文献
- US20120193712A1 FinFET STRUCTURE HAVING FULLY SILICIDED FIN 公开/授权日：2012-08-02
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