发明授权
- 专利标题： Low k precursors providing superior integration attributes
- 专利标题（中）： 提供优异的集成属性的低k前体
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申请号： US12969042申请日： 2010-12-15
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公开(公告)号： US08753986B2公开(公告)日： 2014-06-17
- 发明人: Mary Kathryn Haas , Raymond Nicholas Vrtis , Laura M. Matz
- 申请人： Mary Kathryn Haas , Raymond Nicholas Vrtis , Laura M. Matz
- 申请人地址： US PA Allentown
- 专利权人： Air Products and Chemicals, Inc.
- 当前专利权人： Air Products and Chemicals, Inc.
- 当前专利权人地址： US PA Allentown
- 代理商 Rosaleen P. Morris-Oskanian
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.