发明授权
US08760934B2 3-D structured non-volatile memory device and method of manufacturing the same
有权
3-D结构化非易失性存储器件及其制造方法
- 专利标题： 3-D structured non-volatile memory device and method of manufacturing the same
- 专利标题（中）： 3-D结构化非易失性存储器件及其制造方法
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申请号： US13397024申请日： 2012-02-15
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公开(公告)号： US08760934B2公开(公告)日： 2014-06-24
- 发明人: Hack Seob Shin , Sang Hyun Oh
- 申请人： Hack Seob Shin , Sang Hyun Oh
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2011-0013782 20110216
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A non-volatile memory device includes channel structures that each extend in a first direction, wherein the channel structures each include channel layers and interlayer dielectric layers that are alternately stacked; source structure extending in a second direction crossing the first direction and connected to ends of the channel structures, wherein the source structure includes source lines and interlayer dielectric layers that are alternately stacked; and word lines extending in the second direction and formed to surround the channel structures.
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