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US08765354B2 Resist composition for negative development and method of forming resist pattern 有权
抗蚀剂组成为负面发展和形成抗蚀剂图案的方法

Resist composition for negative development and method of forming resist pattern
摘要:
A resist composition for negative development including a base component (A) which exhibits decreased solubility in an organic solvent under the action of acid and an acid generator component (B) which generates acid upon exposure; and the resist composition used in a method of forming a resist pattern which includes: forming a resist film on a substrate using the resist composition; conducting exposure of the resist film; and patterning the resist film by negative development using a developing solution containing the organic solvent to form a resist pattern, wherein the acid generator component (B) contains an acid generator (B1) that generates an acid having a log P value of 2.7 or less and also a pKa value of at least −3.5.
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