发明授权
US08765354B2 Resist composition for negative development and method of forming resist pattern
有权
抗蚀剂组成为负面发展和形成抗蚀剂图案的方法
- 专利标题: Resist composition for negative development and method of forming resist pattern
- 专利标题(中): 抗蚀剂组成为负面发展和形成抗蚀剂图案的方法
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申请号: US13440090申请日: 2012-04-05
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公开(公告)号: US08765354B2公开(公告)日: 2014-07-01
- 发明人: Yoshiyuki Utsumi , Hiroaki Shimizu
- 申请人: Yoshiyuki Utsumi , Hiroaki Shimizu
- 申请人地址: JP Kawasaki-shi
- 专利权人: Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人: Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Knobbe Martens Olson & Bear LLP
- 优先权: JPP2011-083799 20110405
- 主分类号: G03F7/00
- IPC分类号: G03F7/00 ; G03F7/004 ; G03F7/26 ; G03F7/028
摘要:
A resist composition for negative development including a base component (A) which exhibits decreased solubility in an organic solvent under the action of acid and an acid generator component (B) which generates acid upon exposure; and the resist composition used in a method of forming a resist pattern which includes: forming a resist film on a substrate using the resist composition; conducting exposure of the resist film; and patterning the resist film by negative development using a developing solution containing the organic solvent to form a resist pattern, wherein the acid generator component (B) contains an acid generator (B1) that generates an acid having a log P value of 2.7 or less and also a pKa value of at least −3.5.
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