发明授权
- 专利标题： Semiconductor device structures and the separating methods thereof
- 专利标题（中）： 半导体器件结构及其分离方法
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申请号： US13490992申请日： 2012-06-07
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公开(公告)号： US08765504B2公开(公告)日： 2014-07-01
- 发明人: Shih-I Chen , Ching-Pei Lin , Tzu-Chieh Hsu , Chia-Liang Hsu
- 申请人： Shih-I Chen , Ching-Pei Lin , Tzu-Chieh Hsu , Chia-Liang Hsu
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR Corporation
- 当前专利权人： EPISTAR Corporation
- 当前专利权人地址： TW Hsinchu
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 优先权： TW100120295A 20110609
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/18 ; H01L33/00 ; H01L29/205
摘要：
A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.
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