Invention Grant
- Patent Title: Variable resistance memory devices and methods of manufacturing the same
-
Application No.: US14143760Application Date: 2013-12-30
-
Publication No.: US08765521B2Publication Date: 2014-07-01
- Inventor: Myung Jin Kang , Youngnam Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0016100 20110223
- Main IPC: H01L29/02
- IPC: H01L29/02

Abstract:
According to example embodiments, a variable resistance memory device include an ohmic pattern on a substrate; a first electrode pattern including a first portion that has a plate shape and contacts a top surface of the ohmic pattern and a second portion that extends from one end of the first portion to a top; a variable resistance pattern electrically connected to the first electrode pattern; and a second electrode pattern electrically connected to the variable resistance pattern, wherein one end of the ohmic pattern and the other end of the first portion are disposed on the same plane.
Public/Granted literature
- US20140113429A1 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2014-04-24
Information query
IPC分类: