发明授权
- 专利标题： Method for fabricating semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13154396申请日： 2011-06-06
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公开(公告)号： US08765561B2公开(公告)日： 2014-07-01
- 发明人: Wen-Han Hung , Tsai-Fu Chen , Ta-Kang Lo , Tzyy-Ming Cheng
- 申请人： Wen-Han Hung , Tsai-Fu Chen , Ta-Kang Lo , Tzyy-Ming Cheng
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dummy gate on the substrate; forming a contact etch stop layer on the dummy gate and the substrate; performing a planarizing process to partially remove the contact etch stop layer; partially removing the dummy gate; and performing a thermal treatment on the contact etch stop layer.
公开/授权文献
- US20120309158A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 公开/授权日：2012-12-06
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