发明授权
US08766089B2 Semiconductor substrate, electrode forming method, and solar cell fabricating method
有权
半导体衬底,电极形成方法和太阳能电池制造方法
- 专利标题: Semiconductor substrate, electrode forming method, and solar cell fabricating method
- 专利标题(中): 半导体衬底,电极形成方法和太阳能电池制造方法
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申请号: US13559813申请日: 2012-07-27
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公开(公告)号: US08766089B2公开(公告)日: 2014-07-01
- 发明人: Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
- 申请人: Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.,Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.,Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2006-236499 20060831
- 主分类号: H01L31/00
- IPC分类号: H01L31/00 ; H05K3/24 ; H01L31/0224
摘要:
A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.
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