公开(公告)号：US08253011B2

公开(公告)日：2012-08-28

申请号：US12309923

申请日：2007-08-02

申请人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

IPC分类号： H01L31/00 ,  H01B1/22 ,  C04B41/51

CPC分类号： H05K3/248 ,  H01L31/022425 ,  H05K1/092 ,  H05K2201/0338 ,  H05K2203/1476 ,  Y02E10/50

摘要： The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.

摘要翻译： 本发明涉及一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：由直接连接到半导体衬底的第一电极层和上层结构构成的多层结构 电极层，由至少一层形成并设置在第一电极层上; 其特征在于，所述上部电极层通过烧成总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量 相对于上电极层中的总银含量高于第一电极层中的总银含量。 结果，可以通过简单的方法在半导体衬底上形成具有高纵横比的电极并且几乎不会有诸如断裂的不便。

公开(公告)号：US20090243111A1

公开(公告)日：2009-10-01

申请号：US12309923

申请日：2007-08-02

申请人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

IPC分类号： H01L23/532 ,  H01L21/283 ,  H01L31/18

CPC分类号： H05K3/248 ,  H01L31/022425 ,  H05K1/092 ,  H05K2201/0338 ,  H05K2203/1476 ,  Y02E10/50

摘要： The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.

摘要翻译： 本发明涉及一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：由直接连接到半导体衬底的第一电极层和上层结构构成的多层结构 电极层，由至少一层形成并设置在第一电极层上; 其中上电极层通过焙烧总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量 相对于上电极层中的总银含量高于第一电极层中的总银含量。 结果，可以通过简单的方法在半导体衬底上形成具有高纵横比的电极并且几乎不会有诸如断裂的不便。

公开(公告)号：US20090020158A1

公开(公告)日：2009-01-22

申请号：US11918719

申请日：2006-04-11

申请人： Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Naoki Ishikawa ,  Shigenori Saisu ,  Toyohiro Ueguri ,  Satoyuki Ojima ,  Takenori Watabe ,  Takeshi Akatsuka ,  Tsutomu Onishi

发明人： Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Naoki Ishikawa ,  Shigenori Saisu ,  Toyohiro Ueguri ,  Satoyuki Ojima ,  Takenori Watabe ,  Takeshi Akatsuka ,  Tsutomu Onishi

IPC分类号： H01L31/00 ,  H01L21/22 ,  B32B9/00

CPC分类号： H01L21/2254 ,  H01L31/022425 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

摘要翻译： 本发明是一种通过在具有第一导电类型的半导体衬底中形成pn结来制造太阳能电池的方法，其中至少包括：含有掺杂剂的第一涂层材料和用于防止掺杂剂散射的试剂，以及 包含掺杂剂的第二涂层材料涂覆在具有第一导电类型的半导体衬底上，使得第二涂层材料可以与至少第一涂层材料接触; 并且通过涂覆第一涂料形成的第一扩散层和通过涂覆第二涂料形成的第二扩散层，具有导电性的第二扩散层比第一扩散层的第二扩散层低，通过扩散热处理同时形成 ; 通过该方法制造的太阳能电池; 以及半导体装置的制造方法。 因此，可以提供制造太阳能电池的方法，该太阳能电池可以以低成本制造光电转换效率提高的太阳能电池，并且通过简单且容易的方法，通过抑制光的电极以外的部分的表面复合 - 接收表面并在发射体内复合，同时获得欧姆接触; 该方法制造的太阳能电池; 以及半导体装置的制造方法。

公开(公告)号：US08766089B2

公开(公告)日：2014-07-01

申请号：US13559813

申请日：2012-07-27

申请人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

IPC分类号： H01L31/00 ,  H05K3/24 ,  H01L31/0224

CPC分类号： H05K3/248 ,  H01L31/022425 ,  H05K1/092 ,  H05K2201/0338 ,  H05K2203/1476 ,  Y02E10/50

摘要： A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.

摘要翻译： 一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：具有直接连接到所述半导体衬底的第一电极层的多层结构，以及由至少一个 并设置在第一电极层上。 上电极层通过烧结总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量与 相对于上电极层中的总银含量高于第一电极层中的总银含量。

公开(公告)号：US20090194151A1

公开(公告)日：2009-08-06

申请号：US12309229

申请日：2007-07-12

申请人： Naoki Ishikawa ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Satoyuki Ojima ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Satoyuki Ojima ,  Toyohiro Ueguri

IPC分类号： H01L31/0224 ,  H01L21/02 ,  H01L21/28 ,  H01L23/48 ,  H01L31/10

CPC分类号： H01L31/022425 ,  C03C8/14 ,  C03C8/18 ,  H01L21/2225 ,  H01L31/05 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/3025 ,  Y02E10/50 ,  H01L2924/00

摘要： The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.

摘要翻译： 本发明涉及至少形成有电极的半导体衬底，其中电极具有包括多层结构的两层或多层的多层结构，至少直接接合到半导体衬底的第一电极层包含在 含有Ti，Bi，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Fe，Co，Ni，Si，Al中的至少一种作为添加剂的添加剂， Ge，Sn，Pb和Zn，并且在形成于第一电极层上的电极层中，至少与电线接合的最上层电极层至少含有银和玻璃料，并且不含添加剂。 这使得可以在半导体衬底上形成具有足够的粘合强度粘合到半导体衬底上的电极，并且通过降低接触电阻和互连电阻来以足够的粘合强度通过焊料粘附到电线上。

公开(公告)号：US08319096B2

公开(公告)日：2012-11-27

申请号：US12309229

申请日：2007-07-12

申请人： Naoki Ishikawa ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Satoyuki Ojima ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Satoyuki Ojima ,  Toyohiro Ueguri

IPC分类号： H01L31/00 ,  H01B1/22 ,  C04B41/51

CPC分类号： H01L31/022425 ,  C03C8/14 ,  C03C8/18 ,  H01L21/2225 ,  H01L31/05 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/3025 ,  Y02E10/50 ,  H01L2924/00

摘要： The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.

摘要翻译： 本发明涉及至少形成有电极的半导体衬底，其中电极具有包括多层结构的两层或多层的多层结构，至少直接接合到半导体衬底的第一电极层包含在 含有Ti，Bi，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Fe，Co，Ni，Si，Al中的至少一种作为添加剂的添加剂， Ge，Sn，Pb和Zn，并且在形成于第一电极层上的电极层中，至少与电线接合的最上层电极层至少含有银和玻璃料，并且不含添加剂。 这使得可以在半导体衬底上形成具有足够的粘合强度粘合到半导体衬底上的电极，并且通过降低接触电阻和互连电阻来以足够的粘合强度通过焊料粘附到电线上。

公开(公告)号：US20070249085A1

公开(公告)日：2007-10-25

申请号：US11727435

申请日：2007-03-27

申请人： Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Takenori Watabe

发明人： Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Takenori Watabe

IPC分类号： H01L31/0236

CPC分类号： H01L31/068 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of fabricating a solar cell forms a large number of grooves on a first main surface of a p-type silicon single crystal substrate sliced out from a silicon single crystal ingot as described below. First an edge portion of a groove-carving blade is projected out from a flat substrate feeding surface of a working table by a predetermined height. The p-type silicon single crystal substrate is moved along the substrate feeding surface towards the rotating groove-carving blade while keeping a close contact of the first main surface thereof with the substrate feeding surface. Electrodes are then formed on the inner side face of thus-carved grooves only on one side in the width-wise direction thereof.

摘要翻译： 如下所述，制造太阳能电池的方法在从硅单晶锭切出的p型硅单晶衬底的第一主表面上形成大量的沟槽。 首先，凹槽雕刻刀片的边缘部分从工作台的平坦基底进给表面突出预定高度。 p型硅单晶衬底沿着衬底馈送表面移动到旋转的凹槽雕刻刀片，同时保持其第一主表面与衬底馈送表面的紧密接触。 然后，在这样雕刻的槽的内侧面上仅在其宽度方向的一侧上形成电极。

公开(公告)号：US07355114B2

公开(公告)日：2008-04-08

申请号：US10472115

申请日：2002-03-19

申请人： Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Takenori Watabe

发明人： Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Takenori Watabe

IPC分类号： H01L31/0248 ,  H01L31/068

CPC分类号： H01L31/068 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： An OECO solar cell using a semiconductor single crystal substrate having a plurality of grooves, wherein a minimum groove depth h of each groove always satisfies the relation of h≧W1tan θ where θ represents an angle between a line connecting the lower end, along the thickness-wise direction of the semiconductor single crystal substrate, of an electrode formed in the groove and the upper end of the inner side face of the same groove having no electrode formed thereon, and a reference line normal to the thickness-wise direction, and W1 represents a distance between both opening edges of the groove; wherein the semiconductor single crystal substrate has thickness decreasing from a first side of a first main surface to a second side opposed to the first side; and wherein the plurality of grooves have a depth distribution of being deepest at a thickest position of the substrate, and a gradually becoming shallower towards a thinnest position of the substrate.

摘要翻译： 使用具有多个凹槽的半导体单晶基板的OECO太阳能电池，其中每个凹槽的最小凹槽深度h总是满足h> = W 1tanθ的关系，其中θ表示 连接沿着半导体单晶基板的厚度方向的下端，形成在槽中的电极和形成在其上的没有电极的同一槽的内侧面的上端的线，以及参考线 垂直于厚度方向，W 1 1表示槽的两个开口边缘之间的距离; 其中所述半导体单晶衬底具有从第一主表面的第一侧到与所述第一侧相对的第二侧的厚度; 并且其中所述多个凹槽具有在所述基底的最厚位置处最深的深度分布，并且朝向所述基底的最薄位置逐渐变浅。

公开(公告)号：US06963024B2

公开(公告)日：2005-11-08

申请号：US10250529

申请日：2002-01-30

申请人： Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Takenori Watabe ,  Takao Abe

发明人： Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Takenori Watabe ,  Takao Abe

IPC分类号： E04D13/18 ,  H01L31/04 ,  H01L31/042

CPC分类号： H01L31/022425 ,  F24S30/425 ,  F24S2030/16 ,  H01L31/02 ,  H01L31/035281 ,  H01L31/03529 ,  H02S20/23 ,  H02S20/24 ,  H02S20/30 ,  Y02B10/12 ,  Y02E10/47 ,  Y02E10/50

摘要： A solar cell module 60 has a plurality of solar cells 14 having a plurality of parallel grooves 8 on the individual light-receiving surfaces thereof, each of the grooves having an electrode 5 for extracting output on the inner side face (electrode-forming inner side face) on one side in the width-wise direction thereof; and a support 10, 50 for supporting the solar cells 14 in an integrated manner so as to direct the light-receiving surfaces upward. The annual power output can be increased by adjusting the direction of arrangement of the electrode-forming inner side faces of the grooves 8 while taking the angle of inclination β of the light-receiving surface of the individual as-installed solar cells 14 relative to the horizontal plane and the latitude δ of the installation site of the solar cell module into consideration.

摘要翻译： 太阳能电池模块60具有多个太阳能电池14，该多个太阳能电池14在其各个光接收表面上具有多个平行槽8，每个槽具有用于在内侧面（电极形成内侧） 面）在其横向方向上的一侧; 以及用于以集成的方式支撑太阳能电池14以将光接收表面向上引导的支撑件10,50。 可以通过调节槽8的电极形成内侧面的布置方向，同时采取相对于相应的安装状态的太阳能电池单元14的受光面的倾斜角β来增加年功率输出。 水平面和太阳能电池模块安装位置的纬度三角形。

公开(公告)号：US07615391B2

公开(公告)日：2009-11-10

申请号：US11727435

申请日：2007-03-27

申请人： Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Takenori Watabe

发明人： Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Takenori Watabe

IPC分类号： H01L21/00

CPC分类号： H01L31/068 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of fabricating a solar cell forms a large number of grooves on a first main surface of a p-type silicon single crystal substrate sliced out from a silicon single crystal ingot as described below. First an edge portion of a groove-carving blade is projected out from a flat substrate feeding surface of a working table by a predetermined height. The p-type silicon single crystal substrate is moved along the substrate feeding surface towards the rotating groove-carving blade while keeping a close contact of the first main surface thereof with the substrate feeding surface. Electrodes are then formed on the inner side face of thus-carved grooves only on one side in the width-wise direction thereof.

摘要翻译： 如下所述，制造太阳能电池的方法在从硅单晶锭切出的p型硅单晶衬底的第一主表面上形成大量的沟槽。 首先，凹槽雕刻刀片的边缘部分从工作台的平坦基底进给表面突出预定高度。 p型硅单晶衬底沿着衬底馈送表面移动到旋转的凹槽雕刻刀片，同时保持其第一主表面与衬底馈送表面的紧密接触。 然后，在这样雕刻的槽的内侧面上仅在其宽度方向的一侧上形成电极。