Invention Grant
- Patent Title: Memory devices with a connecting region having a band gap lower than a band gap of a body region
- Patent Title (中): 具有带隙低于身体区域的带隙的连接区域的存储器件
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Application No.: US13872762Application Date: 2013-04-29
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Publication No.: US08766320B2Publication Date: 2014-07-01
- Inventor: Haitao Liu , Jian Li , Chandra Mouli
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Memory devices are shown that include a body region and a connecting region that is formed from a semiconductor with a lower band gap than the body region. Connecting region configurations can provide increased gate induced drain leakage during an erase operation. Configurations shown can provide a reliable bias to a body region for memory operations such as erasing, and containment of charge in the body region during a boost operation.
Public/Granted literature
- US20130234206A1 MEMORY DEVICES WITH A CONNECTING REGION HAVING A BAND GAP LOWER THAN A BAND GAP OF A BODY REGION Public/Granted day:2013-09-12
Information query
IPC分类:
