Invention Grant
US08766411B2 Filler for filling a gap, method of preparing the same and method of manufacturing semiconductor capacitor using the same
有权
用于填充间隙的填料，其制备方法以及使用其制造半导体电容器的方法
- Patent Title: Filler for filling a gap, method of preparing the same and method of manufacturing semiconductor capacitor using the same
- Patent Title (中): 用于填充间隙的填料，其制备方法以及使用其制造半导体电容器的方法
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Application No.: US13548519Application Date: 2012-07-13
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Publication No.: US08766411B2Publication Date: 2014-07-01
- Inventor: Eun-Su Park , Bong-Hwan Kim , Sang-Hak Lim , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Sang-Kyun Kim , Jin-Wook Lee
- Applicant: Eun-Su Park , Bong-Hwan Kim , Sang-Hak Lim , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Sang-Kyun Kim , Jin-Wook Lee
- Applicant Address: KR Gumi-si, Kyeongsangbuk-do
- Assignee: Cheil Industries, Inc.
- Current Assignee: Cheil Industries, Inc.
- Current Assignee Address: KR Gumi-si, Kyeongsangbuk-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2011-0070672 20110715
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A filler for filling a gap includes a compound represented by the following Chemical Formula 1. SiaNbOcHd. [Chemical Formula 1] In Chemical Formula 1, a, b, c, and d represent relative amounts of Si, N, 0, and H, respectively, in the compound, 1.96
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