发明授权
US08766608B2 Voltage regulator circuit and semiconductor device, including transistor using oxide semiconductor
有权
电压调节器电路和半导体器件,包括使用氧化物半导体的晶体管
- 专利标题: Voltage regulator circuit and semiconductor device, including transistor using oxide semiconductor
- 专利标题(中): 电压调节器电路和半导体器件,包括使用氧化物半导体的晶体管
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申请号: US12909629申请日: 2010-10-21
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公开(公告)号: US08766608B2公开(公告)日: 2014-07-01
- 发明人: Shunpei Yamazaki , Jun Koyama , Kei Takahashi , Masashi Tsubuku , Kosei Noda
- 申请人: Shunpei Yamazaki , Jun Koyama , Kei Takahashi , Masashi Tsubuku , Kosei Noda
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2009-250396 20091030; JP2010-012618 20100122
- 主分类号: G05F1/00
- IPC分类号: G05F1/00 ; H01L27/14
摘要:
A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.
公开/授权文献
- US20110101942A1 VOLTAGE REGULATOR CIRCUIT 公开/授权日:2011-05-05