Invention Grant
US08767428B2 Canary based SRAM adaptive voltage scaling (AVS) architecture and canary cells for the same
有权
基于金丝雀的SRAM自适应电压缩放（AVS）架构和金丝雀单元相同
- Patent Title: Canary based SRAM adaptive voltage scaling (AVS) architecture and canary cells for the same
- Patent Title (中): 基于金丝雀的SRAM自适应电压缩放（AVS）架构和金丝雀单元相同
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Application No.: US13172665Application Date: 2011-06-29
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Publication No.: US08767428B2Publication Date: 2014-07-01
- Inventor: Vivek Asthana
- Applicant: Vivek Asthana
- Applicant Address: NL Amsterdam
- Assignee: STMicroelectronics International N. V.
- Current Assignee: STMicroelectronics International N. V.
- Current Assignee Address: NL Amsterdam
- Agency: Hogan Lovells US LLP
- Main IPC: G11C15/00
- IPC: G11C15/00
Abstract:
A memory bank includes memory cells and an additional cell to determine an operating voltage of the memory bank. The additional cell has an operating margin that is less than a corresponding operating margin of the other memory cells in the memory bank.
Public/Granted literature
- US20130003442A1 CANARY BASED SRAM ADAPTIVE VOLTAGE SCALING (AVS) ARCHITECTURE AND CANARY CELLS FOR THE SAME Public/Granted day:2013-01-03
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