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US08767450B2 Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same 有权
存储器控制器用于刷新内存扇区以响应写入信号和包括其的存储器系统

Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
摘要：
A memory system includes a memory cell array having a plurality of memory sectors. Each memory sector includes a plurality of memory cells. The memory system further includes a controller configured to write data to the memory cell array in response to a writing signal. The controller is further configured to refresh a memory sector among the plurality of memory sectors each time a writing signal is provided. When N (N is a positive integer) memory cells are programmed, a programming current is less than or equal to about 0.75 mA*N.
摘要（中）：

存储器系统包括具有多个存储器扇区的存储单元阵列。 每个存储器扇区包括多个存储单元。 存储器系统还包括配置成响应于写入信号将数据写入存储单元阵列的控制器。 控制器还被配置为在每次提供写入信号时刷新多个存储器扇区中的存储器扇区。 当N（N是正整数）存储单元被编程时，编程电流小于或等于大约0.75mA * N。

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