发明授权
US08767459B1 Data storage in analog memory cells across word lines using a non-integer number of bits per cell 有权
使用每个单元的非整数位数据在字线之间的模拟存储单元中数据存储

Data storage in analog memory cells across word lines using a non-integer number of bits per cell
摘要:
A method for data storage includes accepting data for storage in an array of analog memory cells, which are arranged in rows associated with respective word lines. At least a first page of the data is stored in a first row of the array, and at least a second page of the data is stored in a second row of the array, having a different word line from the first row. After storing the first and second pages, a third page of the data is stored jointly in the first and second rows.
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