发明授权
- 专利标题： Memory segment accessing in a memory device
- 专利标题（中）： 内存段访问存储设备
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申请号： US13564883申请日： 2012-08-02
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公开(公告)号： US08767470B2公开(公告)日： 2014-07-01
- 发明人: Tomoharu Tanaka
- 申请人： Tomoharu Tanaka
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/06
摘要：
Bit lines of a memory segment are read at substantially the same time by coupling a selected memory segment and, at some of the data lines of any intervening segments, to respective data caches. The bit lines of the unselected memory segments that are not used to couple the selected segment to the data caches can be coupled to their respective source lines.
公开/授权文献
- US20120294088A1 MEMORY SEGMENT ACCESSING IN A MEMORY DEVICE 公开/授权日：2012-11-22
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