发明授权
- 专利标题: Terahertz interaction circuit with open cavity portion
- 专利标题(中): 太赫兹相互作用电路与开放空腔部分
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申请号: US13401304申请日: 2012-02-21
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公开(公告)号: US08768115B2公开(公告)日: 2014-07-01
- 发明人: Chan-wook Baik , Ho-young Ahn
- 申请人: Chan-wook Baik , Ho-young Ahn
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2011-0084060 20110823
- 主分类号: G02B6/12
- IPC分类号: G02B6/12 ; H01J25/24 ; H01P3/20 ; B23K31/02
摘要:
A terahertz interaction circuit includes a waveguide through which electromagnetic waves pass, the waveguide having a folded shape and including a narrow open cavity portion; and an electron beam tunnel through which an electron beam passes, the electron beam tunnel penetrating through the waveguide.
公开/授权文献
- US20130051724A1 TERAHERTZ INTERACTION CIRCUIT 公开/授权日:2013-02-28