发明授权
US08771917B2 Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns
有权
单体,聚合物,光致抗蚀剂组合物和形成光刻图案的方法
- 专利标题: Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns
- 专利标题(中): 单体,聚合物,光致抗蚀剂组合物和形成光刻图案的方法
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申请号: US13341931申请日: 2011-12-31
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公开(公告)号: US08771917B2公开(公告)日: 2014-07-08
- 发明人: Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
- 申请人: Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
- 申请人地址: US MA Marlborough US MI Midland
- 专利权人: Rohm and Haas Electronics Materials LLC,Dow Global Technologies LLC
- 当前专利权人: Rohm and Haas Electronics Materials LLC,Dow Global Technologies LLC
- 当前专利权人地址: US MA Marlborough US MI Midland
- 代理商 Jonathan D. Baskin
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; C08F24/00 ; G03F7/039 ; G06F7/38
摘要:
Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
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