发明授权
- 专利标题： Focus control method for photolithography
- 专利标题（中）： 光刻对焦控制方法
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申请号： US13227805申请日： 2011-09-08
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公开(公告)号： US08772054B2公开(公告)日： 2014-07-08
- 发明人: Jen-Pan Wang , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
- 申请人： Jen-Pan Wang , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 代理商 Steven E. Koffs
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.
公开/授权文献
- US20130065328A1 FOCUS CONTROL METHOD FOR PHOTOLITHOGRAPHY 公开/授权日：2013-03-14
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