Invention Grant
- Patent Title: Focus control method for photolithography
- Patent Title (中): 光刻对焦控制方法
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Application No.: US13227805Application Date: 2011-09-08
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Publication No.: US08772054B2Publication Date: 2014-07-08
- Inventor: Jen-Pan Wang , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
- Applicant: Jen-Pan Wang , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.
Public/Granted literature
- US20130065328A1 FOCUS CONTROL METHOD FOR PHOTOLITHOGRAPHY Public/Granted day:2013-03-14
Information query
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