Invention Grant
- Patent Title: Ion implantation method and ion implantation apparatus
- Patent Title (中): 离子注入法和离子注入装置
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Application No.: US13426423Application Date: 2012-03-21
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Publication No.: US08772142B2Publication Date: 2014-07-08
- Inventor: Shiro Ninomiya , Tetsuya Kudo , Akihiro Ochi
- Applicant: Shiro Ninomiya , Tetsuya Kudo , Akihiro Ochi
- Applicant Address: JP Tokyo
- Assignee: SEN Corporation
- Current Assignee: SEN Corporation
- Current Assignee Address: JP Tokyo
- Agency: Arent Fox LLP
- Priority: JP2011-064666 20110323
- Main IPC: H01L21/425
- IPC: H01L21/425

Abstract:
An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.
Public/Granted literature
- US20120244691A1 ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS Public/Granted day:2012-09-27
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