公开(公告)号：US20150064887A1

公开(公告)日：2015-03-05

申请号：US14468787

申请日：2014-08-26

申请人： SEN Corporation

发明人： Kazuhisa Manabe ,  Takanori Yagita

IPC分类号： H01J37/24 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/243 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/265

摘要： An ion implantation apparatus includes an implantation processing chamber, a high voltage unit, and a high-voltage power supply system. In the implantation processing chamber ions are implanted into a workpiece. The high voltage unit includes an ion source unit for generating the ions, and a beam transport unit provided between the ion source unit and the implantation processing chamber. The high-voltage power supply system applies a potential to the high voltage unit under any one of a plurality of energy settings. The high-voltage power supply system includes a plurality of current paths formed such that a beam current flowing into the workpiece is returned to the ion source unit, and each of the plurality of energy settings is associated with a corresponding one of the plurality of current paths.

摘要翻译： 离子注入装置包括注入处理室，高压单元和高压电源系统。 在植入处理室中将离子注入工件中。 高电压单元包括用于产生离子的离子源单元和设置在离子源单元和注入处理室之间的束输送单元。 高压电源系统在多个能量设定中的任意一个下向高压单元施加电位。 高电压电源系统包括多个电流路径，其形成为流入工件的射束电流返回到离子源单元，并且多个能量设置中的每一个与多个电流中的相应一个电流相关联 路径。

公开(公告)号：US20140291543A1

公开(公告)日：2014-10-02

申请号：US14229038

申请日：2014-03-28

申请人： SEN Corporation

发明人： Masateru Sato ,  Hiroshi Matsushita

IPC分类号： H01J37/08 ,  H01J37/317 ,  H01J37/30

CPC分类号： H01J37/3171 ,  H01J37/248 ,  H01J2237/032 ,  H01J2237/036 ,  H01J2237/038 ,  H01J2237/08

摘要： An insulation structure of high voltage electrodes includes an insulator having an exposed surface and a conductor portion, which includes a joint region in contact with the insulator, and a heat-resistant portion provided, along at least part of an edge of the joint region, in such a manner as to be adjacent to the exposed surface of the insulator. The heat-resistant portion is formed of an electrically conductive material whose melting point is higher than that of the conductor portion. The heat-resistant portion may be so provided as to have a gap between the insulator and the exposed surface.

摘要翻译： 高电压电极的绝缘结构包括具有暴露表面的绝缘体和导体部分，导体部分包括与绝缘体接触的接合区域，以及沿着接合区域的边缘的至少一部分设置的耐热部分， 以与绝缘体的暴露表面相邻的方式。 耐热部由熔点高于导体部的导电性材料形成。 耐热部分可以设置成在绝缘体和暴露表面之间具有间隙。

公开(公告)号：US20140062286A1

公开(公告)日：2014-03-06

申请号：US14011575

申请日：2013-08-27

申请人： SEN Corporation

发明人： Masateru Sato

IPC分类号： H01J5/10

CPC分类号： H01J5/10 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/082 ,  H01J2237/31701

摘要： An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and producing plasma discharge; and causing radicals generated in generating ions to react with a liner provided to cover an inner wall of the arc chamber at least partially. The liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber.

摘要翻译： 离子产生方法使用设置有由高熔点材料形成的电弧室的直流放电离子源，并且包括：通过使源气体的分子与电弧室中的热电子碰撞并产生等离子体放电而产生离子; 并且使产生离子产生的自由基与至少部分地覆盖电弧室的内壁的衬垫反应。 衬垫由与源电极气体相比所产生的自由基反应的材料形成为比电弧室的材料更为反应。

公开(公告)号：US20130249400A1

公开(公告)日：2013-09-26

申请号：US13829573

申请日：2013-03-14

申请人： SEN CORPORATION

发明人： Masateru SATO

IPC分类号： H01J27/02

CPC分类号： H01J27/024 ,  H01J27/146

摘要： An ion source device has a configuration in which a cathode is provided in an arc chamber having a space for plasma formation, and a repeller is disposed to face a thermal electron discharge face of the cathode by interposing the space for plasma formation therebetween. An external magnetic field that is induced by a source magnetic field unit is applied to the space for plasma formation in a direction parallel to an axis that connects the cathode and the repeller. An opening is provided in a place corresponding to a portion in the repeller with the highest density of plasma that is formed in the space for plasma formation, and an ion beam is extracted from the opening.

摘要翻译： 离子源装置具有这样的结构，其中在具有等离子体形成空间的电弧室中设置阴极，并且通过在其之间插入等离子体形成空间来设置斥极板以面对阴极的热电子放电面。 由源极磁场单元感应的外部磁场被施加到与连接阴极和排斥器的轴平行的方向上的等离子体形成的空间。 在与等离子体形成用空间中形成的等离子体的密度最高的排斥体的一部分相对应的位置设置有开口部，从开口部取出离子束。

公开(公告)号：US20130092825A1

公开(公告)日：2013-04-18

申请号：US13653211

申请日：2012-10-16

申请人： SEN Corporation

发明人： Shiro NINOMIYA ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC分类号： H01L21/265

CPC分类号： H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

摘要： During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

摘要翻译： 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

公开(公告)号：US20120244691A1

公开(公告)日：2012-09-27

申请号：US13426423

申请日：2012-03-21

申请人： Shiro NINOMIYA ,  Tetsuya KUDO ,  Akihiro OCHI

发明人： Shiro NINOMIYA ,  Tetsuya KUDO ,  Akihiro OCHI

IPC分类号： H01L21/265

CPC分类号： H01L21/265 ,  C23C14/48 ,  C23C14/542 ,  H01J37/3007 ,  H01J37/3023 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/30483

摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

摘要翻译： 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额

公开(公告)号：US08163635B2

公开(公告)日：2012-04-24

申请号：US12962035

申请日：2010-12-07

申请人： Michiro Sugitani ,  Genshu Fuse

发明人： Michiro Sugitani ,  Genshu Fuse

IPC分类号： H01L21/01 ,  H01L21/425 ,  H01L21/84

CPC分类号： H01L21/26586 ,  H01L21/26513 ,  H01L21/26526 ,  H01L29/66803

摘要： A manufacturing method of a semiconductor device includes preparing a semiconductor substrate which is a base substrate of the semiconductor device and which is formed with a concavity and convexity part on the surface of the semiconductor substrate. The method further comprises depositing on the surface of the semiconductor substrate an impurity thin film including an impurity atom which becomes a donor or an acceptor in the semiconductor substrate and performing an ion implantation from a diagonal upper direction to the impurity thin film deposited on the concavity and convexity part of the semiconductor substrate. The method still further comprises recoiling the impurity atom from the inside of the impurity thin film to the inside of the concavity and convexity part by performing the ion implantation.

摘要翻译： 半导体器件的制造方法包括制备作为半导体器件的基底的半导体衬底，并且在半导体衬底的表面上形成有凹凸部。 该方法还包括在半导体衬底的表面上沉积杂质薄膜，该杂质薄膜包含在半导体衬底中成为供体或受体的杂质原子，并从对角上方执行离子注入沉积在凹面上的杂质薄膜 和半导体衬底的凸部。 该方法还包括通过进行离子注入将杂质原子从杂质薄膜的内部重新吸收到凹凸部的内部。

公开(公告)号：US07982192B2

公开(公告)日：2011-07-19

申请号：US12106735

申请日：2008-04-21

申请人： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

发明人： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/1477 ,  H01J2237/0042 ,  H01J2237/028

摘要： In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.

摘要翻译： 在包括具有两电极型偏转扫描电极的光束扫描器的光束处理装置中，光束扫描器还包括分别在两电极型偏转扫描电极的上游侧和下游侧的附近的屏蔽抑制电极组件，并具有矩形的开口 用于通过带电粒子束的形状。 每个屏蔽抑制电极组件是包括一片抑制电极和插入抑制电极的两片屏蔽接地电极的组装电极。 两电极型偏转扫描电极的前侧部分和后侧部分被两片屏蔽接地电极屏蔽。

公开(公告)号：US20110136329A1

公开(公告)日：2011-06-09

申请号：US12962035

申请日：2010-12-07

申请人： Michiro SUGITANI ,  Genshu Fuse

发明人： Michiro SUGITANI ,  Genshu Fuse

IPC分类号： H01L21/265

CPC分类号： H01L21/26586 ,  H01L21/26513 ,  H01L21/26526 ,  H01L29/66803

摘要： A manufacturing method of a semiconductor device includes preparing a semiconductor substrate which is a base substrate of the semiconductor device and which is formed with a concavity and convexity part on the surface of the semiconductor substrate. The method further comprises depositing on the surface of the semiconductor substrate an impurity thin film including an impurity atom which becomes a donor or an acceptor in the semiconductor substrate and performing an ion implantation from a diagonal upper direction to the impurity thin film deposited on the concavity and convexity part of the semiconductor substrate. The method still further comprises recoiling the impurity atom from the inside of the impurity thin film to the inside of the concavity and convexity part by performing the ion implantation.

摘要翻译： 半导体器件的制造方法包括制备作为半导体器件的基底的半导体衬底，并且在半导体衬底的表面上形成有凹凸部。 该方法还包括在半导体衬底的表面上沉积杂质薄膜，该杂质薄膜包含在半导体衬底中成为供体或受体的杂质原子，并从对角上方执行离子注入沉积在凹面上的杂质薄膜 和半导体衬底的凸部。 该方法还包括通过进行离子注入将杂质原子从杂质薄膜的内部重新吸收到凹凸部的内部。

公开(公告)号：US07429743B2

公开(公告)日：2008-09-30

申请号：US11202111

申请日：2005-08-12

申请人： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

发明人： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

IPC分类号： H01L49/00

CPC分类号： H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30477 ,  H01J2237/31705

摘要： The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

摘要翻译： 本发明是提高具有光束的照射系统的光束照射精度的方法。 照射系统包括光束产生源，质量分析装置，光束变换器，高速摆动光束的扫描器，光束并行化装置，加速/减速装置，能量过滤装置和光束监视器。 光束变换器包括垂直聚焦同步四极电磁体syQD和水平聚焦同步四极电磁体syQF。 因此，可以通过扫描仪摆动光束之后，在中心轨迹和外部轨迹之间的范围内校正光束发散角的偏差和光束尺寸的偏差中的至少一个。