- 专利标题： Technique for controlling trench profile in semiconductor structures
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申请号： US12109302申请日： 2008-04-24
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公开(公告)号： US08772169B2公开(公告)日： 2014-07-08
- 发明人: Hui Chen , Qi Wang , Briant Harward , James Pan
- 申请人： Hui Chen , Qi Wang , Briant Harward , James Pan
- 申请人地址： US ME South Portland
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 当前专利权人地址： US ME South Portland
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method for forming a semiconductor structure includes the following steps. Trenches are formed in a semiconductor region using a masking layer such that the trenches have a first depth, a first width along their bottom, and sidewalls having a first slope. The masking layer is removed, and a bevel etch is performed to taper the sidewalls of the trenches so that the sidewalls have a second slope less than the first slope.
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