发明授权
- 专利标题: Photoelectric conversion device and manufacturing method thereof
- 专利标题(中): 光电转换装置及其制造方法
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申请号: US12848357申请日: 2010-08-02
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公开(公告)号: US08772627B2公开(公告)日: 2014-07-08
- 发明人: Shunpei Yamazaki , Yasuyuki Arai , Satohiro Okamoto
- 申请人: Shunpei Yamazaki , Yasuyuki Arai , Satohiro Okamoto
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2009-184794 20090807
- 主分类号: H01L31/00
- IPC分类号: H01L31/00 ; H01L31/0352 ; H01L31/0368
摘要:
To provide a photoelectric conversion device whose characteristics are sufficiently improved. The photoelectric conversion device includes: a first electrode; a unit cell having a semiconductor layer exhibiting a first conductivity type, a semiconductor layer having an effect of photoelectric conversion, and a semiconductor layer exhibiting a second conductivity type; and a second electrode. In the semiconductor layer having an effect of photoelectric conversion, crystal grains each grain diameter of which is smaller than a thickness of the semiconductor layer having an effect of photoelectric conversion are aligned in the thickness direction of the semiconductor layer having an effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.
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