利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US08772858B2 Vertical channel memory and manufacturing method thereof and operating method using the same 有权
垂直通道存储器及其制造方法及其使用方法

Vertical channel memory and manufacturing method thereof and operating method using the same
摘要：
A vertical channel memory including a substrate, a channel, a multi-layer structure, a gate, a first terminal and a second terminal is provided. The channel protrudes from the substrate and has a top surface and two vertical surfaces. The multi-layer structure is disposed on the two vertical surfaces of the channel. The gate straddling multi-layer structure is positioned above the two vertical surfaces of the channel. The first terminal and the second terminal are respectively positioned at two sides of the channel opposing to the gate.
摘要（中）：

提供了包括基板，通道，多层结构，栅极，第一端子和第二端子的垂直沟道存储器。 该通道从基板突出并且具有顶表面和两个垂直表面。 多层结构设置在通道的两个垂直表面上。 跨越多层结构的栅极位于通道的两个垂直表面上方。 第一端子和第二端子分别位于与栅极相对的通道的两侧。

公开/授权文献
信息查询
Espacenet
0/0