发明授权
- 专利标题： Method and apparatus for backside illumination sensor
- 专利标题（中）： 背面照明传感器的方法和装置
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申请号： US13409924申请日： 2012-03-01
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公开(公告)号： US08772899B2公开(公告)日： 2014-07-08
- 发明人: Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
- 申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater and Matsil, L.L.P.
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L31/02
摘要：
Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
公开/授权文献
- US20130228886A1 Method and Apparatus for Backside Illumination Sensor 公开/授权日：2013-09-05
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