Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13741879Application Date: 2013-01-15
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Publication No.: US08772914B2Publication Date: 2014-07-08
- Inventor: Yasutaka Nakashiba , Kenta Ogawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-203040 20090902
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/60 ; H01L23/52

Abstract:
A first semiconductor chip and a second semiconductor chip are overlapped with each other in a direction in which a first multilayer interconnect layer and a second multilayer interconnect layer are opposed to each other. When seen in a plan view, a first inductor and a second inductor are overlapped. The first semiconductor chip and the second semiconductor chip have non-opposed areas which are not opposed to each other. The first multilayer interconnect layer has a first external connection terminal in the non-opposed area, and the second multilayer interconnect layer has a second external connection terminal in the non-opposed area.
Public/Granted literature
- US20130127033A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-05-23
Information query
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