Invention Grant
- Patent Title: Implementing logic circuits with memristors
- Patent Title (中): 用忆阻器实现逻辑电路
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Application No.: US13561978Application Date: 2012-07-30
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Publication No.: US08773167B2Publication Date: 2014-07-08
- Inventor: Warren Robinett , R. Stanley Williams
- Applicant: Warren Robinett , R. Stanley Williams
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H03K19/00
- IPC: H03K19/00 ; G11C11/00

Abstract:
Implementing logic with memristors may include circuitry with at least three memristors and a bias resistor in a logic cell. One of the at least three memristors is an output memristor within the logic cell and the other memristors of the at least three memristors are input memristors. Each of the at least three memristors and the bias resistor are electrically connected to voltage sources wherein each voltage applied to each of the at least three memristors and the bias resistor and resistance states of the at least three memristors determine a resistance state of the output memristor.
Public/Granted literature
- US20140028347A1 IMPLEMENTING LOGIC CIRCUITS WITH MEMRISTORS Public/Granted day:2014-01-30
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