Invention Grant
- Patent Title: Devices and methods to program a memory cell
- Patent Title (中): 用于编程存储单元的设备和方法
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Application No.: US13974731Application Date: 2013-08-23
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Publication No.: US08773900B2Publication Date: 2014-07-08
- Inventor: Umberto Di Vincenzo , Carlo Lisi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: WOPCT/IT2011/000067 20110311
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.
Public/Granted literature
- US20130343120A1 DEVICES AND METHODS TO PROGRAM A MEMORY CELL Public/Granted day:2013-12-26
Information query
