发明授权
- 专利标题： Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
- 专利标题（中）： 稳定氢化非晶硅和无定形氢化硅合金的方法
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申请号： US13188214申请日： 2011-07-21
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公开(公告)号： US08778448B2公开(公告)日： 2014-07-15
- 发明人: Bahman Hekmatshoar-Tabari , Marinus Hopstaken , Dae-Gyu Park , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人： Bahman Hekmatshoar-Tabari , Marinus Hopstaken , Dae-Gyu Park , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： B05D5/00
- IPC分类号： B05D5/00
摘要：
A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material.
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