Invention Grant
- Patent Title: Local oxidation of silicon processes with reduced lateral oxidation
- Patent Title (中): 硅工艺的局部氧化减少了横向氧化
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Application No.: US12726215Application Date: 2010-03-17
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Publication No.: US08778717B2Publication Date: 2014-07-15
- Inventor: Ru-Shang Hsiao , Chung-Te Lin , Nai-Wen Cheng , Yin-Kai Liao , Wei Chuang Wu
- Applicant: Ru-Shang Hsiao , Chung-Te Lin , Nai-Wen Cheng , Yin-Kai Liao , Wei Chuang Wu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of forming an integrated circuit structure includes providing a silicon substrate, and implanting a p-type impurity into the silicon substrate to form a p-type region. After the step of implanting, performing an anneal to form a silicon oxide region, with a portion of the p-type region converted to the silicon oxide region.
Public/Granted literature
- US20110230002A1 Local Oxidation of Silicon Processes with Reduced Lateral Oxidation Public/Granted day:2011-09-22
Information query
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