发明授权
US08778751B2 Method for producing a structure element and semiconductor component comprising a structure element
有权
用于制造包括结构元件的结构元件和半导体部件的方法
- 专利标题： Method for producing a structure element and semiconductor component comprising a structure element
- 专利标题（中）： 用于制造包括结构元件的结构元件和半导体部件的方法
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申请号： US13235550申请日： 2011-09-19
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公开(公告)号： US08778751B2公开(公告)日： 2014-07-15
- 发明人: Martin Poelzl
- 申请人： Martin Poelzl
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： DE102010046213 20100921
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/423 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L21/762
摘要：
A semiconductor component includes a semiconductor body having a surface and a cutout in the semiconductor body. The cutout extends from the surface of the semiconductor body into the semiconductor body in a direction perpendicular to the surface. The cutout has a base and at least one sidewall. The component further includes a layer on the surface of the semiconductor body and in the cutout. The layer forms a well above the cutout. The well has a well base, a well edge and at least one well sidewall. The at least one well sidewall forms an angle α in the range of 20° to 80° with respect to the surface of the semiconductor body. The layer has at least one edge which, proceeding from the well edge, extends in the direction of the surface of the semiconductor body.
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