发明授权
- 专利标题： Methods of manufacturing a DRAM device
- 专利标题（中）： 制造DRAM器件的方法
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申请号： US13540996申请日： 2012-07-03
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公开(公告)号： US08778757B2公开(公告)日： 2014-07-15
- 发明人: Jong-Chul Park , Sang-sup Jeong
- 申请人： Jong-Chul Park , Sang-sup Jeong
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2011-0065875 20110704
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
In methods of manufacturing a DRAM device, a buried-type gate is formed in a substrate. A capping insulating layer pattern is formed on the buried-type gate. A conductive layer pattern filling up a gap between portions of the capping insulating layer pattern, and an insulating interlayer covering the conductive layer pattern and the capping insulating layer pattern are formed. The insulating interlayer, the conductive layer pattern, the capping insulating layer pattern and an upper portion of the substrate are etched to form an opening, and a first pad electrode making contact with a first pad region. A spacer is formed on a sidewall of the opening corresponding to a second pad region. A second pad electrode is formed in the opening. A bit line electrically connected with the second pad electrode and a capacitor electrically connected with the first pad electrode are formed.
公开/授权文献
- US20130011989A1 METHODS OF MANUFACTURING A DRAM DEVICE 公开/授权日：2013-01-10
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