发明授权
- 专利标题： Field focusing features in a ReRAM cell
- 专利标题（中）： ReRAM单元中的场聚焦功能
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申请号： US13486690申请日： 2012-06-01
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公开(公告)号： US08779405B2公开(公告)日： 2014-07-15
- 发明人: Feng Zhou , Frank K. Baker, Jr. , Ko-Min Chang , Cheong Min Hong
- 申请人： Feng Zhou , Frank K. Baker, Jr. , Ko-Min Chang , Cheong Min Hong
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 David G. Dolezal; Joanna G. Chiu
- 主分类号： H01L29/02
- IPC分类号： H01L29/02
摘要：
A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters (911, 1211) including a plurality of nanoclusters in contact with the dielectric storage material layer and in contact with the first conductive electrode or the second conductive electrode.
公开/授权文献
- US20130320285A1 FIELD FOCUSING FEATURES IN A RERAM CELL 公开/授权日：2013-12-05