发明授权
- 专利标题： Stress-alleviation layer for LED structures
- 专利标题（中）： LED结构应力消除层
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申请号： US12179160申请日： 2008-07-24
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公开(公告)号： US08779445B2公开(公告)日： 2014-07-15
- 发明人: Chen-Hua Yu , Hung-Ta Lin , Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu
- 申请人： Chen-Hua Yu , Hung-Ta Lin , Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater and Matsil, L.L.P.
- 主分类号： H01L29/18
- IPC分类号： H01L29/18
摘要：
A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs.
公开/授权文献
- US20100001257A1 Stress-Alleviation Layer for LED Structures 公开/授权日：2010-01-07
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