Invention Grant
- Patent Title: Semiconductor light-emitting device with a protection layer
- Patent Title (中): 具有保护层的半导体发光器件
-
Application No.: US12982210Application Date: 2010-12-30
-
Publication No.: US08779447B2Publication Date: 2014-07-15
- Inventor: Chin-Lin Yao , Chih-Chiang Lu
- Applicant: Chin-Lin Yao , Chih-Chiang Lu
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW98146164A 20091230
- Main IPC: H01L33/64
- IPC: H01L33/64 ; H01L33/10

Abstract:
The present application discloses a semiconductor light-emitting device with a protection layer. The structure includes a heat dispersion substrate, a first connecting layer on the heat dispersion substrate, a protection layer on the first connecting layer, a second connecting layer on the protection layer, and a light-emitting unit on the second connecting layer. The protection layer is highly insulative and can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate.
Public/Granted literature
- US20110156066A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A PROTECTION LAYER Public/Granted day:2011-06-30
Information query
IPC分类: