Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13283603Application Date: 2011-10-28
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Publication No.: US08779526B2Publication Date: 2014-07-15
- Inventor: Chun-Wei Hsu , Po-Cheng Huang , Ren-Peng Huang , Jie-Ning Yang , Chia-Lin Hsu , Teng-Chun Tsai , Chih-Hsun Lin , Chang-Hung Kung , Yen-Ming Chen , Yu-Ting Li
- Applicant: Chun-Wei Hsu , Po-Cheng Huang , Ren-Peng Huang , Jie-Ning Yang , Chia-Lin Hsu , Teng-Chun Tsai , Chih-Hsun Lin , Chang-Hung Kung , Yen-Ming Chen , Yu-Ting Li
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the substrate of the resistor region; forming a tank in the STI of the resistor region; and forming a resistor in the tank and on the surface of the STI adjacent to two sides of the tank.
Public/Granted literature
- US20130105912A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-05-02
Information query
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