发明授权
- 专利标题: Multi-cascode amplifier bias techniques
- 专利标题(中): 多共源共栅放大器偏置技术
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申请号: US13570062申请日: 2012-08-08
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公开(公告)号: US08779859B2公开(公告)日: 2014-07-15
- 发明人: Wenjun Su , Chiewcharn Narathong , Guangming Yin , Aristotele Hadjichristos
- 申请人: Wenjun Su , Chiewcharn Narathong , Guangming Yin , Aristotele Hadjichristos
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理商 Ramin Mobarhan
- 主分类号: H03F1/22
- IPC分类号: H03F1/22
摘要:
Techniques for generating bias voltages for a multi-cascode amplifier. In an aspect, a multi-cascode bias network is provided, each transistor in the bias network being a replica of a corresponding transistor in the multi-cascode amplifier, enabling accurate biasing of the transistors in the multi-cascode amplifier. In another aspect, a voltage supply for the multi-cascode amplifier is provided separately from a voltage supply for the replica bias network, to advantageously decouple variations in the amplifier voltage supply from the bias network voltage supply. In yet another aspect, the bias voltages of transistors in the multi-cascode amplifier may be configured by adjusting the impedance of resistive voltage dividers coupled to the transistor gate biases. As the gain of the amplifier depends on the bias voltages of the cascode amplifiers, the gain of the amplifier may be adjusted in this manner without introducing a variable gain element directly in the amplifier signal path.
公开/授权文献
- US20140043102A1 MULTI-CASCODE AMPLIFIER BIAS TECHNIQUES 公开/授权日:2014-02-13
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