发明授权
- 专利标题: Plasmon absorption modulator systems and methods
- 专利标题(中): 等离子体吸收调制器系统和方法
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申请号: US13364832申请日: 2012-02-02
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公开(公告)号: US08780431B1公开(公告)日: 2014-07-15
- 发明人: Rohan Deodatta Kekatpure , Paul Davids
- 申请人: Rohan Deodatta Kekatpure , Paul Davids
- 申请人地址: US NM Albuquerque
- 专利权人: Sandia Corporation
- 当前专利权人: Sandia Corporation
- 当前专利权人地址: US NM Albuquerque
- 代理商 Martin I. Finston
- 主分类号: G02F1/01
- IPC分类号: G02F1/01 ; G02B5/00
摘要:
Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.
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