Invention Grant
- Patent Title: Method of optical proximity correction
- Patent Title (中): 光学邻近校正方法
-
Application No.: US13802587Application Date: 2013-03-13
-
Publication No.: US08782572B1Publication Date: 2014-07-15
- Inventor: Sheng-Yuan Huang , Chia-Wei Huang , Ming-Jui Chen
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of optical proximity correction (OPC) includes the following steps. First, a layout pattern is provided to a computer system. Subsequently, the layout pattern is classified into a first sub-layout pattern and a second sub-layout pattern. Then, an OPC calculation based on a first OPC model is performed on the first sub-layout pattern so as to form a corrected first sub-layout pattern and an OPC calculation based on a second OPC model is performed on the second sub-layout pattern so as to form a corrected second sub-layout pattern. Afterward, the corrected first sub-layout pattern and the corrected second sub-layout pattern are output from the computer system into a photomask.
Information query