发明授权
- 专利标题： DRAM cell based on conductive nanochannel plate
- 专利标题（中）： 基于导电纳米通道板的DRAM单元
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申请号： US13017682申请日： 2011-01-31
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公开(公告)号： US08785271B2公开(公告)日： 2014-07-22
- 发明人: Dmytro Chumakov , Wolfgang Buchholtz , Petra Hetzer
- 申请人： Dmytro Chumakov , Wolfgang Buchholtz , Petra Hetzer
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES, Inc.
- 当前专利权人： GLOBALFOUNDRIES, Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Ditthavong & Steiner, P.C.
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A capacitor is formed in nano channels in a conductive body. Embodiments include forming a source contact through a first inter layer dielectric (ILD), forming a conductive body on the first ILD, forming a second ILD on the conductive body, forming drain and gate contacts through the second ILD, conductive body, and first ILD, forming nano channels in the conductive body, forming an insulating layer in the channels, and metalizing the channels. An embodiment includes forming the nano channels by forming a mask on the second ILD, the mask having features with a pitch of 50 nanometers (nm) to 100 nm, etching the second ILD through the mask, etching the conductive body through the mask to a depth of 80% to 90% of the thickness of the conductive body, and removing the mask.
公开/授权文献
- US20120193807A1 DRAM CELL BASED ON CONDUCTIVE NANOCHANNEL PLATE 公开/授权日：2012-08-02
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