发明授权
- 专利标题： Process to make high-K transistor dielectrics
- 专利标题（中）： 制造高K晶体管电介质的工艺
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申请号： US13224059申请日： 2011-09-01
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公开(公告)号： US08785272B2公开(公告)日： 2014-07-22
- 发明人: Liang-Gi Yao , Ming-Fang Wang , Shih-Chang Chen , Mong-Song Liang
- 申请人： Liang-Gi Yao , Ming-Fang Wang , Shih-Chang Chen , Mong-Song Liang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/28 ; H01L21/314
摘要：
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
公开/授权文献
- US20110318915A1 PROCESS TO MAKE HIGH-K TRANSISTOR DIELECTRICS 公开/授权日：2011-12-29
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