发明授权
- 专利标题: High strength through-substrate vias
- 专利标题(中): 高强度通衬底通孔
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申请号: US13293698申请日: 2011-11-10
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公开(公告)号: US08785790B2公开(公告)日: 2014-07-22
- 发明人: Cyprian Emeka Uzoh , Charles G. Woychik , Terrence Caskey , Belgacem Haba , Hiroaki Sato , Philip Damberg
- 申请人: Cyprian Emeka Uzoh , Charles G. Woychik , Terrence Caskey , Belgacem Haba , Hiroaki Sato , Philip Damberg
- 申请人地址: US CA San Jose
- 专利权人: Invensas Corporation
- 当前专利权人: Invensas Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号: H05K1/11
- IPC分类号: H05K1/11 ; H01K3/10
摘要:
A component includes a support structure having first and second spaced-apart and parallel surfaces and a plurality of conductive elements extending in a direction between the first and second surfaces. Each conductive element contains an alloy of a wiring metal selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth. The alloy has a composition that varies with distance in at least one direction across the conductive element. A concentration of the additive is less than or equal to 5% of the total atomic mass of the conductive element, and a resistivity of the conductive element is between 2.5 and 30 micro-ohm-centimeter.
公开/授权文献
- US20130118784A1 HIGH STRENGTH THROUGH-SUBSTRATE VIAS 公开/授权日:2013-05-16
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